Discovering Amorphous Indium Phosphide Nanostructures with High-Temperature ab Initio Molecular Dynamics
نویسندگان
چکیده
We employ high-temperature ab initio molecular dynamics (AIMD) as a sampling approach to discover low-energy, semiconducting, indium phosphide nanostructures. Starting from under-coordinated models of InP (e.g. a single layer of InP(111)), rapid rearrangement into a stabilized, higher-coordinate but amorphous cluster is observed across the size range considered (In3P3 to In22P22). These clusters exhibit exponential decrease in energy per atom with system size as effective coordination increases, which we define through distance-cutoff coordination number assignment and partial charge analysis. The sampling approach is robust to initial configuration choice as consistent results are obtained when alternative crystal models or computationally efficient generation of structures from sequential addition and removal of atoms are employed. This consistency is observed across the 66 structures compared here, and even when as many as five approaches are compared, the average difference in energy per pair of atoms in these structures is only 1.5 kcal/mol at a given system size. Interestingly, the energies of these amorphous clusters are lower than geometry optimized spherical models of bulk InP typically used for simulations of quantum dots. Favorable energetics appear correlated to highlycoordinated indium and phosphorus with coordination numbers up to five and seven, respectively, as well as formation of phosphorus-phosphorus bonds.
منابع مشابه
Direct Observation of Early-Stage Quantum Dot Growth Mechanisms with High-Temperature Ab Initio Molecular Dynamics
Colloidal quantum dots (QDs) exhibit highly desirable sizeand shapedependent properties for applications from electronic devices to imaging. Indium phosphide QDs have emerged as a primary candidate to more toxic CdSe QDs, but production of InP QDs with the desired properties lags behind other QD materials due to a poor understanding of how to tune the growth process. Using high-temperature ab i...
متن کاملCation Size Effects on the Electronic and Structural Properties of SolutionProcessed InXO Thin Films
DOI: 10.1002/aelm.201500146 These include, but are by no means limited to, display backplanes, smart windows, solar cells, and radio-frequency identifi cation tags. A combination of high carrier mobility, even in the amorphous state, excellent optical transparency, and the ability to process these thin-fi lm materials from solution offers the potential of novel applications and a paradigm shift...
متن کاملStructural properties of Ge-S amorphous networks in relationship with rigidity transitions: an ab initio molecular dynamics study
We investigate the amorphous GexS100−x (with 10≤ x ≤40) system from ab initio simulations. Results show a very good agreement with experimental findings from diffraction and the topology of the obtained structural models is further analyzed and compared with the selenide analogue. Differences emerge however from a detailed Molecular Dynamics analysis showing the ring statistics and the homopola...
متن کاملThe Structure and Properties of Amorphous Indium Oxide
A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmis...
متن کاملComposition-dependent structural and transport properties of amorphous transparent conducting oxides
Structural properties of amorphous In-based oxides, In-X-O with X = Zn, Ga, Sn, or Ge, are investigated using ab initio molecular dynamics liquid-quench simulations. The results reveal that indium retains its average coordination of 5.0 upon 20%X fractional substitution for In, whereasX cations satisfy their natural coordination with oxygen atoms. This finding suggests that the carrier generati...
متن کامل